Transport in one-dimensional semiconductor devices

Author

Islam, S.K. ; Jain, F.C.

Author_Institution

Dept. of Electr. Eng., North Florida Univ., Jacksonville, FL, USA

fYear

1995

fDate

7-9 Mar 1995

Firstpage

73

Lastpage

78

Abstract

A novel quantum well wire (QWW) realized in a high electron mobility transistor structure is presented. The QWW structure is incorporated in the design of one-dimensional modulation-doped field-effect transistor (1-D MODFET) and one-dimensional quantum interference transistor (1-D QUIT) structures. Transport characteristics of the AlGaAs-GaAs 1-D MODFET and 1-D QUIT are presented and compared with two-dimensional devices. Our calculations show a significant improvement of the transconductance in one-dimensional transistors compared with their two-dimensional counterparts

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; one-dimensional conductivity; quantum interference devices; semiconductor quantum wires; 1D MODFET; 1D QUIT; AlGaAs-GaAs; high electron mobility transistor structure; one-dimensional quantum interference transistor; one-dimensional semiconductor devices; quantum well wire; transconductance; transport characteristics; two-dimensional devices; Carrier confinement; Electrons; Equations; Etching; Gallium arsenide; HEMTs; MODFETs; Semiconductor devices; Transconductance; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Southcon/95. Conference Record

Conference_Location

Fort Lauderdale, FL

Print_ISBN

0-7803-2576-1

Type

conf

DOI

10.1109/SOUTHC.1995.516080

Filename

516080