DocumentCode
2479821
Title
Large-signal MESFET model and circuit simulation validation for microwave high-power amplification
Author
Xuebang, Gao ; Du Hongyan ; Xianhua, Sun
Author_Institution
Hebei Semicond. Res. Inst., Shijiazhuang, China
fYear
1997
fDate
2-5 Dec 1997
Firstpage
725
Abstract
The application of a large-signal MESFET model to high power amplification is examined. The gate capacitance models, gate forward conduction and thermoelectric coupling effects are investigated. The simulation results using standard and extended harmonic balance methods are compared to measurements of output power, gain, efficiency and linearity for a C-band power amplification
Keywords
capacitance; equivalent circuits; microwave field effect transistors; microwave power amplifiers; microwave power transistors; power MESFET; semiconductor device models; thermal analysis; C-band power amplification; circuit simulation validation; gate capacitance models; gate forward conduction; harmonic balance methods; large-signal MESFET model; microwave high-power amplification; thermoelectric coupling effects; Capacitance; Circuit simulation; Coupling circuits; Gain measurement; MESFET circuits; Measurement standards; Power generation; Power measurement; Power system harmonics; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific
Print_ISBN
962-442-117-X
Type
conf
DOI
10.1109/APMC.1997.654644
Filename
654644
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