Towards a hybrid CMOS-imager with organic semiconductors as photoactive layer

Hybrid CMOS-imagers with vertically integrated organic semiconductors are proposed to enhance the currently small fill factor of conventional CMOS-pixels. Organic photodetectors (OPDs) are low-cost and easy processable and their performance begins to match the one of silicon based devices. Therefore, they are advantageous compared to other hybrid concepts like costly microlenses or thin-film-on-ASIC. In addition, the spectral tunability of organic materials allows photon detection even beyond the visible range of the spectrum. This paper describes current and future work on integrating organic layers on top of CMOS-circuits and on the design of a CMOS-read out chip for investigating material specific characteristics like cross-talk and noise.