Title :
Modeling thermoelectric behavior in Bi nano-wires
Author :
Dresselhaus, G. ; Dresselhaus, M.S. ; Zhang, Z. ; Sun, X. ; Ying, J. ; Chen, G.
Author_Institution :
Francis Bitter Nat. Magnet Lab., MIT, Cambridge, MA, USA
Abstract :
The small effective mass of Bi and high anisotropy of its Fermi surface make Bi nano-wires an excellent system for studying quantum confinement effects on the transport properties of a quasi one-dimensional (1D) electron gas, such as the electrical conductivity, magnetoresistance, thermoelectric power, and thermal conductivity. A theoretical model based on the basic band structure of bulk Bi, suitably modified for the 1D situation, is developed to predict the dependence of these quantities on wire diameter, temperature and crystalline orientation of the Bi nano-wires. Experiments have been carried out on ultra-fine single-crystalline Bi nano-wires (10-120 nm in diameter) with packing densities as high as 7×1010 nanowires/cm2 to test the quantum confinement assumptions of the model. Strong experimental evidence has been observed for an interesting quantum confinement-induced semimetal-to-semiconductor transition in Bi nano-wires with diameters less than 100 nm
Keywords :
Fermi surface; band structure; bismuth; effective mass; electrical conductivity; electron gas; magnetoresistance; metal-insulator transition; nanostructured materials; quantum wires; thermal conductivity; thermoelectric power; Bi; Bi nano-wires; Fermi surface anisotropy; crystalline orientation; effective mass; electrical conductivity; magnetoresistance; quantum confinement; quasi-1D electron gas; semimetal-semiconductor transition; thermal conductivity; thermoelectric power; wire diameter; Bismuth; Effective mass; Electrons; Magnetic properties; Magnetoresistance; Potential well; Power system modeling; Predictive models; Thermal conductivity; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-4907-5
DOI :
10.1109/ICT.1998.740314