DocumentCode
2480070
Title
An improved large-signal model for varactor and GaAs FET diodes
Author
Xuebang, Gao ; Yaping, Liang ; Bin, Liao
Author_Institution
Hebei Semicond. Res. Inst., Shijiazhuang, China
fYear
1997
fDate
2-5 Dec 1997
Firstpage
729
Abstract
An improved large-signal model for varactor and GaAs FET diodes is presented. Good agreement between simulated and measured C-V, I-V and Pout-Pin is demonstrated. The proposed model is more accurate and easier to extract than previously presented empirical diode models
Keywords
III-V semiconductors; capacitance; equivalent circuits; gallium arsenide; microwave diodes; semiconductor device models; varactors; C-V characteristics; GaAs; GaAs FET diodes; I-V characteristics; Pout-Pin; large-signal model; varactor; Capacitance; Capacitance-voltage characteristics; Circuit simulation; Equations; FETs; Gallium arsenide; P-n junctions; Semiconductor diodes; Varactors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific
Print_ISBN
962-442-117-X
Type
conf
DOI
10.1109/APMC.1997.654645
Filename
654645
Link To Document