Title :
Noise performance of Si/Si1-xGex n-channel HEMTs and p-channel FETs
Author :
Liu, Kuo-Wei ; Anwar, A.F.M.
Author_Institution :
Mingchuan Univ., Taipei, Taiwan
fDate :
29 Apr-3 May 1996
Abstract :
Noise characteristics are evaluated for SiGe/Si based n-channel HEMTs and p-channel MOSFETs. The analysis is based on a self-consistent solution of Schroedinger and Poisson´s equations. The model predicts a superior minimum noise figure for an n-channel HEMT at 77 K. p-channel MOSFETs behave similar to n-channel devices operating at 300 K. The minimum noise figure decreases with increasing quantum well (QW) width for both n- and p-channel devices. However, the p-channel devices are less sensitive to QW width variation. Minimum noise temperature behaves similarly. As observed, a range of doped epilayer thickness exists where the minimum noise figure is a minimum for both n- and p-channel FETs
Keywords :
Ge-Si alloys; MOSFET; Schrodinger equation; elemental semiconductors; high electron mobility transistors; semiconductor device models; semiconductor device noise; semiconductor epitaxial layers; silicon; 77 K; Poisson´s equation; Schroedinger´s equation; Si-SiGe; epilayer thickness; minimum noise figure; n-channel HEMT; noise performance; noise temperature; p-channel MOSFET; quantum well width; self-consistent solution; FETs; Germanium silicon alloys; HEMTs; MODFETs; MOSFETs; Noise figure; Poisson equations; Predictive models; Silicon germanium; Temperature sensors;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571084
