AlGaAs lasers fabricated with pulsed anodic oxides

Author

Grove, M.J. ; Hudson, D.A. ; Zory, P.S. ; Dalby, R.J. ; Harding, C.M. ; Rosenberg, A.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

fYear

1993

fDate

15-18 Nov 1993

Firstpage

24

Lastpage

25

Abstract

In conclusion, we have demonstrated that uniform, native oxides can be formed on GaAs and AlGaAs materials using a pulsed voltage technique. It is a fast room temperature process which uses inexpensive standard lab equipment. AlGaAs diode lasers fabricated with the pulsed anodic technique had threshold currents substantially lower than deposited oxide devices

Keywords

III-V semiconductors; aluminium compounds; chemical vapour deposition; epitaxial growth; gallium arsenide; optical fabrication; oxidation; quantum well lasers; semiconductor growth; AlGaAs; AlGaAs lasers fabrication; fast room temperature process; inexpensive standard lab equipment; pulsed anodic oxides; pulsed anodic technique; pulsed voltage technique; threshold currents; uniform native oxides; Chemical lasers; Etching; Gallium arsenide; Geometrical optics; Optical pulses; Oxidation; Pulsed laser deposition; Resists; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379145

Filename

379145