Title :
New technologies toward high performance 1.3 μm strained-quantum well laser
Author :
Ishikawa, H. ; Soda, H. ; Nakajima, K.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
The InP based 1.3 μm strained-quantum well laser shows much inferior temperature characteristics and lower output power when compared with GaAs based 0.98 μm strained-quantum well laser. The reason for this is yet to be understood, however, it is urgently required to develop lasers emitting at 1.3 μm having performances comparable to or better than those of the GaAs based laser for the coming subscriber systems and optical interconnection systems. We are taking new approaches toward a very high performance new strained-quantum well laser for 1.3 μm
Keywords :
III-V semiconductors; indium compounds; infrared sources; optical communication equipment; optical fibre subscriber loops; quantum well lasers; 1.3 μm strained-quantum well laser; 1.3 mum; InP; lower output power; optical fibre communication; optical interconnection systems; subscriber systems; temperature characteristics; Gallium arsenide; Indium phosphide; Laser theory; Optical superlattices; Potential well; Power generation; Power lasers; Stimulated emission; Temperature; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379148
