New technologies toward high performance 1.3 μm strained-quantum well laser

Author

Ishikawa, H. ; Soda, H. ; Nakajima, K.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1993

fDate

15-18 Nov 1993

Firstpage

19

Lastpage

20

Abstract

The InP based 1.3 μm strained-quantum well laser shows much inferior temperature characteristics and lower output power when compared with GaAs based 0.98 μm strained-quantum well laser. The reason for this is yet to be understood, however, it is urgently required to develop lasers emitting at 1.3 μm having performances comparable to or better than those of the GaAs based laser for the coming subscriber systems and optical interconnection systems. We are taking new approaches toward a very high performance new strained-quantum well laser for 1.3 μm

Keywords

III-V semiconductors; indium compounds; infrared sources; optical communication equipment; optical fibre subscriber loops; quantum well lasers; 1.3 μm strained-quantum well laser; 1.3 mum; InP; lower output power; optical fibre communication; optical interconnection systems; subscriber systems; temperature characteristics; Gallium arsenide; Indium phosphide; Laser theory; Optical superlattices; Potential well; Power generation; Power lasers; Stimulated emission; Temperature; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379148

Filename

379148