Title :
Strained-layer InGaAs-GaAs-AlGaAs buried heterostructure lasers by three-step selective-area metalorganic chemical vapor deposition
Author :
Cockerill, T.M. ; Forbes, D.V. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
In this talk, we present the fabrication process and laser results for narrow stripe, index-guided strained layer lasers with low threshold currents and good spectral characteristics. Threshold currents as low as 11 mA for uncoated devices and single longitudinal mode operation are obtained for the three step growth buried heterostructure laser, indicating high quality device performance for devices fabricated with an AlGaAs regrowth step
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; epitaxial growth; gallium arsenide; indium compounds; optical fabrication; semiconductor growth; semiconductor lasers; 11 mA; AlGaAs regrowth step; InGaAs-GaAs-AlGaAs; fabrication process; good spectral characteristics; high quality device performance; laser results; low threshold currents; narrow stripe index-guided strained layer lasers; single longitudinal mode operation; strained-layer InGaAs-GaAs-AlGaAs buried heterostructure lasers; three step growth buried heterostructure laser; three-step selective-area metalorganic chemical vapor deposition; uncoated devices; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Geometrical optics; Inductors; Laboratories; Laser modes; MOCVD; Optical device fabrication; Optical materials;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379149
