• DocumentCode
    2480205
  • Title

    Electrophysical studies of 2D-hole spectral characteristics and peculiarities of scattering mechanisms in Ge layers of Ge-Ge1-x Six heterostructures

  • Author

    Arapov, Yu. ; Yakunin, M. ; Orlov, L. ; Rubtsova, R. ; Yov, L. Vorob ; Donetsky, D.

  • Author_Institution
    Inst. for Phys. of Metals, Ekaterinburg, Russia
  • fYear
    1996
  • fDate
    29 Apr-3 May 1996
  • Firstpage
    245
  • Lastpage
    248
  • Abstract
    The spectral characteristics of 2D holes near the Brillouin band centre and the heating conditions of charge carriers in Ge layers of a Ge-Ge1-xSix multiquantum well heterostructure were studied by the electrophysical method in strong magnetic and electric fields
  • Keywords
    Ge-Si alloys; Hall mobility; elemental semiconductors; germanium; hot carriers; semiconductor materials; semiconductor quantum wells; two-dimensional electron gas; 2D holes; Brillouin band centre; Ge-Ge1-xSix; Ge-GeSi; charge carrier heating; electric fields; electrophysical method; multiquantum well heterostructure; spectral characteristics; strong magnetic fields; Brillouin scattering; Charge carriers; Cyclotrons; Hall effect; Magnetic field induced strain; Magnetic fields; Periodic structures; Physics; Quantum well devices; Resonance light scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
  • Conference_Location
    Toulouse
  • Print_ISBN
    0-7803-3179-6
  • Type

    conf

  • DOI
    10.1109/SIM.1996.571088
  • Filename
    571088
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2480205