Abstract :
Layered semiconductor devices consisting of III-V or II-VI materials instead of Si are gaining more and more importance in the field of modern electronics. For example, telecommunication supported by optoelectronic devices is presently one of the most important and rapidly evolving field of advanced high-technology, device applications for III-V based compounds are for instance HEMTs, LEDs, lasers, OEICs, MMICs, HBTs, satellite-bound solar cells with high efficiency etc.; device applications for II-VI materials lie in the field of visible light detectors, infrared detectors, tuneable lasers, LEDs, etc
Keywords :
HEMT integrated circuits; II-VI semiconductors; III-V semiconductors; MMIC; bipolar integrated circuits; integrated optoelectronics; laser tuning; light emitting diodes; optoelectronic devices; photodetectors; semiconductor growth; semiconductor lasers; solar cells; vapour phase epitaxial growth; HBTs; HEMTs; II-VI materials; III-V based compounds; III-V materials; LEDs; MMICs; MOVPE technology; OEICs; device applications; high efficiency; high-technology; infrared detectors; lasers; layered semiconductor devices; modern electronics; optoelectronic devices; satellite-bound solar cells; telecommunication; tuneable lasers; visible light detectors; Epitaxial growth; Epitaxial layers; II-VI semiconductor materials; III-V semiconductor materials; Infrared detectors; Laser tuning; Light emitting diodes; Optical materials; Optoelectronic devices; Semiconductor devices;
