Title :
Infrared absorption related to the metastable state of arsenic antisite defects in electron-irradiated GaAs
Author :
Kuisma, S. ; Saarinen, K. ; Hautojärvi, P. ; Corbel, C.
Author_Institution :
Lab. of Phys., Helsinki Univ. of Technol., Espoo, Finland
fDate :
29 Apr-3 May 1996
Abstract :
A metastable irradiation-induced vacancy is detected by positrons in semi-insulating GaAs. The vacancy is associated with the metastable state of an irradiation-induced as-antisite-related defect. This metastable state absorbs IR light in contrast to the metastable state of the as-antisite-related native EL2 defect. This property can be explained by the presence of other defects complexed with the as antisite in electron-irradiated GaAs
Keywords :
III-V semiconductors; deep levels; defect absorption spectra; electron beam effects; gallium arsenide; infrared spectra; metastable states; vacancies (crystal); EL2 defect; GaAs; IR absorption; antisite defects; electron-irradiation; metastable state; positron irradiation-induced vacancy; Annealing; Electromagnetic wave absorption; Electrons; Gallium arsenide; Infrared detectors; Lighting; Metastasis; Performance evaluation; Positrons; Spectroscopy;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571095
