Study of structure of low-symmetry complexes in n-GaAs through investigation of integrated polarization of photoluminescence under uniaxial pressure

Author

Gutkin, A.A. ; Reshchikov, M.A. ; Sedov, V.E. ; Sosnovskii, V.R.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

271

Lastpage

274

Abstract

We have investigated the effect of uniaxial pressure on polarization of wide photoluminescence (PL) bands related to complexes in GaAs. It is shown that the V_GaTe_As, V_GaSn_Ga and V_GaSi_Ga complexes responsible for the 1.2 eV PL band and the Cu_GaTe_As, Cu_GaS_As and Cu_GaSe_As complexes responsible for the 1.3 eV PL band have an additional distortion which can be reoriented and aligned by uniaxial pressure in conditions of PL observation at low temperature

Keywords

III-V semiconductors; gallium arsenide; impurity-vacancy interactions; photoluminescence; silicon; tellurium; tin; 1.3 eV; Cu_GaS_As complexes; Cu_GaSe_As complexes; Cu_GaTe_As complexes; GaAs:Si; GaAs:Sn; GaAs:Te; V_GaSi_Ga complexes; V_GaSn_Ga complexes; V_GaTe_As complexes; distortion; integrated polarization; n-GaAs:Te(Sn)(Si); photoluminescence; structure; uniaxial pressure; Crystals; Electron optics; Gallium arsenide; Integrated optics; Optical distortion; Optical polarization; Photoluminescence; Stress; Temperature; Vectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.571096

Filename

571096