Title :
Low dislocation density 3-inch Si doped GaAs crystals by Vertical Boat growth
Author :
Hagi, Y. ; Kawarabayashi, S. ; Inoue, T. ; Nakai, R. ; Kohno, J. ; Kawase, T. ; Tatsumi, M.
Author_Institution :
Semicond. Div., Sumitomo Electr. Ind. Ltd., Itami, Japan
fDate :
29 Apr-3 May 1996
Abstract :
3-inch Si doped GaAs crystals with low dislocation density (⩽100 cm-2) were developed by the Vertical Boat (VB) method. The shape of the solid/liquid interface was controlled by the temperature gradient near the interface. The desirable interface shape for low dislocation density was studied both empirically and through computer simulation. By improving the interface shape, the stable production of crystals with low dislocation density were achieved
Keywords :
Hall effect; III-V semiconductors; crystal growth from melt; dislocation density; dislocation etching; gallium arsenide; photoluminescence; semiconductor growth; silicon; GaAs:Si; Hall measurement; computer simulation; dislocation density; empirical method; interface shape; photoluminescence; solid/liquid interface; temperature gradient; vertical boat growth; Atomic measurements; Boats; Crystals; Furnaces; Gallium arsenide; Shape control; Shape measurement; Solid modeling; Temperature control; Thermal stresses;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571099
