DocumentCode
2480395
Title
Defect characterization in plastically deformed gallium arsenide
Author
Leipner, H.S. ; Hübner, C. ; Storbeck, O. ; Polity, A. ; Krause-Rehberg, R.
Author_Institution
Fachbereich Phys., Martin-Luther-Univ., Halle-Wittenberg, Germany
fYear
1996
fDate
29 Apr-3 May 1996
Firstpage
283
Lastpage
286
Abstract
The defect spectrum in plastically deformed GaAs is analyzed by positron lifetime measurements. Different types of defects, such as vacancy clusters or antisites, are identified and their thermal annealing behavior is studied
Keywords
III-V semiconductors; annealing; gallium arsenide; plastic deformation; positron annihilation; tellurium; vacancies (crystal); GaAs:Te; antisites; defect spectrum; plastic deformation; positron lifetime; thermal annealing; vacancy clusters; Annealing; Argon; Atmosphere; Atmospheric measurements; Gallium arsenide; Infrared spectra; Positrons; Spectroscopy; Temperature measurement; Uniaxial strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location
Toulouse
Print_ISBN
0-7803-3179-6
Type
conf
DOI
10.1109/SIM.1996.571100
Filename
571100
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