Title :
Influence of MBE growth conditions on deep electronic states at the inverted GaAs/AlAs interface
Author :
Krispin, P. ; Hey, R. ; Kostial, H.
Author_Institution :
Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany
fDate :
29 Apr-3 May 1996
Abstract :
Under standard MBE growth conditions, a series of electron traps is concentrated near the inverted. GaAs/AlAs interface (GaAs grown on top of AlAs). These levels have been identified as being due to native point defects on the AlAs side of the heterointerface. The particular influence of As4 flux, growth temperature, and growth rate is examined with respect to the intrinsic levels at the inverted GaAs/AlAs interface. It is shown that the structural and compositional perfection of the inverted interface is strongly affected by excess arsenic during growth. Moreover, it is found that the accumulation of the dominant, arsenic vacancy-related defect on the AlAs side of the inverted interface is neither influenced by the As4 flux, nor by the growth rate
Keywords :
III-V semiconductors; aluminium compounds; deep levels; electron traps; gallium arsenide; interface structure; molecular beam epitaxial growth; semiconductor growth; semiconductor junctions; stoichiometry; vacancies (crystal); As4 flux; GaAs-AlAs; GaAs/AlAs inverted interface; MBE growth; compositional perfection; deep electronic states; electron traps; growth rate; growth temperature; native point defects; structural perfection; vacancy-related defect; Capacitance; Electric potential; Electron traps; Gallium arsenide; Heterojunctions; Particle scattering; Spectroscopy; Substrates; Temperature; Voltage;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571101
