DocumentCode :
2480453
Title :
Tunneling spectroscopy of electronic structures of Bi2-xSnxTe3
Author :
Nakura, T. ; Bando, H. ; Sasagawa, H. ; Kulbachinskii, V.A. ; Ozaki, H.
Author_Institution :
Dept. of Electr., Electron. & Comput. Eng., Waseda Univ., Tokyo, Japan
fYear :
1998
fDate :
24-28 May 1998
Firstpage :
141
Lastpage :
144
Abstract :
Tunneling spectroscopy has been carried out in order to investigate the electronic structure of Bi2-xSnxTe 3. The results are compared with the model of the electronic structure previously proposed by Kulbachinskii et al. The experimental results did not reproduce the model. The tunneling measurements showed that Sn associated electronic states distribute in the lower valence band over a wide energy range
Keywords :
band structure; bismuth compounds; scanning tunnelling spectroscopy; semiconductor materials; thermoelectricity; tin compounds; (BiSn)2Te3; Bi2-xSnxTe3; electronic states; electronic structures; lower valence band; tunneling spectroscopy; Bismuth; Crystalline materials; Crystallization; Doping; Physics; Spectroscopy; Tellurium; Tin; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
ISSN :
1094-2734
Print_ISBN :
0-7803-4907-5
Type :
conf
DOI :
10.1109/ICT.1998.740337
Filename :
740337
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2480453
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