Exploring ageing effects on integrated power devices (I–V) for health monitoring

Author

Marcault, E. ; Breil, M. ; Bourennane, A. ; Tounsi, P. ; Dupuy, P.

Author_Institution

LAAS, CNRS, Toulouse, France

fYear

2011

fDate

3-7 July 2011

Firstpage

189

Lastpage

192

Abstract

Based on 3D FEM electro thermo mechanical simulations (COMSOL) and 2D multi-cells simulation (Sentaurus TCAD), we explore the impact of main ageing phenomena (bonding wire lift off and solder joint delamination) at the origin of power assembly failures, on the electrical characteristics of MOS gated power devices (IGBT, VDMOS). Electrical characteristics variations are analyzed with a view to using them for health monitoring of embedded power assemblies.

Keywords

MOS integrated circuits; ageing; delamination; electromechanical effects; failure analysis; finite element analysis; insulated gate bipolar transistors; integrated circuit metallisation; integrated circuit modelling; power MOSFET; power bipolar transistors; power integrated circuits; semiconductor device metallisation; semiconductor device models; solders; technology CAD (electronics); 2D multicell simulation; 3D FEM electrothermomechanical simulations; COMSOL; IGBT; MOS gated power devices; Sentaurus TCAD; VDMOS; ageing effect; bonding wire lift off; electrical characteristics; embedded power assembly; health monitoring; integrated power devices; metallization ageing; power assembly failure; solder joint delamination; Aging; Insulated gate bipolar transistors; Metallization; Soldering; Stress; Thermal stresses; 2D physical simulations; 3D FEM electro thermo mechanical simulations; IGBT; VDMOS; health monitoring; power assemblies;

fLanguage

English

Publisher

ieee

Conference_Titel

Ph.D. Research in Microelectronics and Electronics (PRIME), 2011 7th Conference on

Conference_Location

Trento

Print_ISBN

978-1-4244-9138-4

Electronic_ISBN

978-1-4244-9136-0

Type

conf

DOI

10.1109/PRIME.2011.5966249

Filename

5966249