Title :
Deep trap characterization of Al.48In.52As/In .52(Ga.7Al.3).48As heterostructures
Author :
Rezzoug, K. ; Ducroquet, F. ; Guillot, G. ; Giraudet, L. ; Praseuth, J.P.
Author_Institution :
Lab. de Physique de la Matiere, INSA-Lyon, Villeurbanne, France
fDate :
29 Apr-3 May 1996
Abstract :
Electron traps in AlInAs/In.52(Ca1-xAlx ).48As (x=0.3) heterostructures are investigated by deep level transient spectroscopy. Two dominant traps with activation energies of 0.31 and 0.59 eV are observed in quaternary and ternary layers respectively. Both these levels are supposed to be intrinsic defects from the same origin. Another defect at Ec-0.4 eV is detected at the AlInAs/InCaAlAs interface. The concentration of this trap is found to be non uniformly distributed on the wafer and possible impurity contamination is suggested
Keywords :
III-V semiconductors; aluminium compounds; deep level transient spectroscopy; deep levels; defect states; electron traps; gallium arsenide; impurity distribution; impurity states; indium compounds; interface states; semiconductor heterojunctions; Al.48In.52As/In.52(Ga.7Al.3).48As heterostructures; Al0.48In0.52As-In0.52(Ga0.7Al0.3)0.48As; AlInAs/In.52(Ca1-xAlx).48As; AlInAs/InGaAlAs interface; activation energies; deep level transient spectroscopy; deep trap characterization; electron traps; impurity contamination; intrinsic defects; quaternary layers; ternary layers; Contamination; Electron traps; HEMTs; Impurities; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Spectroscopy; Substrates; Telecommunications;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571102
