Title :
Determination of Franz-Keldysh electrorefraction near the GaAs absorption edge using epitaxial liftoff thin film semiconductor etalons
Author :
Calhoun, Kenneth H. ; Jokerst, N.M.
Author_Institution :
Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We report the first direct measurement of near-band edge (within several meV) Franz-Keldysh electrorefraction in GaAs using thin film, P-i-N double heterostructures and MSM structures fabricated using epitaxial liftoff processing. Thin metallic films are applied to the top and bottom surfaces of the devices and are used as both electrical contacts and mirrors
Keywords :
Fabry-Perot interferometers; III-V semiconductors; electro-optical effects; electroabsorption; gallium arsenide; metal-semiconductor-metal structures; p-n heterojunctions; refractive index; semiconductor epitaxial layers; semiconductor thin films; Franz-Keldysh electrorefraction; GaAs; MSM structures; P-i-N double heterostructures; absorption edge; electrical contacts; epitaxial liftoff processing; epitaxial liftoff thin film semiconductor etalons; mirrors; near-band edge; thin metallic films; Absorption; Contacts; Electric variables measurement; Fabry-Perot; Gallium arsenide; Mirrors; Optical films; PIN photodiodes; Photonic band gap; Semiconductor thin films;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379198
