Title :
Electronic transport properties of BixTey-infiltrated synthetic opals
Author :
Sumanasekera, G.U. ; Grigorian, L. ; Williams, K.A. ; Eklund, P.C. ; Zakhidov, A.A. ; Khayrullin, I.I. ; Baughman, R.
Author_Institution :
Dept. of Phys. & Astron., Kentucky Univ., Lexington, KY, USA
Abstract :
We have demonstrated that crystalline BixTey can be grown directly inside the 100-200 nm diameter pores of a synthetic opal host using a metal-organic chemical vapor deposition (MOCVD). A series of BixTey-infiltrated opal samples have been characterized by X-ray powder diffraction, scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDXS). Thermoelectric power values in the infiltrated opal samples ranged from -70 μV/K to +200 μV/K at room temperature T=300 K for the Bi- and the Te-rich Bi2Te3 compositions, respectively. The n-type (Bi-rich) samples were found to exhibit metallic electrical resistivity R (dR/dT>0) from 10 to 300 K, while the p-type (Te-rich) samples demonstrated negative dR/dT
Keywords :
MOCVD; X-ray chemical analysis; X-ray diffraction; bismuth compounds; electrical resistivity; narrow band gap semiconductors; porous materials; scanning electron microscopy; semiconductor growth; semiconductor materials; thermoelectric power; 10 to 300 K; 100 to 200 nm; 20 C; Bi-rich Bi2Te3; BixTey-infiltrated synthetic opals; EDXS; MOCVD; SEM; SiO2:BiTe; Te-rich Bi2Te3; X-ray powder diffraction; electronic transport; energy dispersive X-ray spectroscopy; metal-organic chemical vapor deposition; metallic electrical resistivity; n-type sample; p-type Te-rich samples; pores; room temperature; scanning electron microscopy; synthetic opal host; thermoelectric power; Bismuth; Chemical vapor deposition; Crystallization; Dispersion; MOCVD; Powders; Scanning electron microscopy; Spectroscopy; Tellurium; X-ray diffraction;
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-4907-5
DOI :
10.1109/ICT.1998.740348
