Title :
Doped β-FeSi2 as thin film thermoelement sensor material
Author :
Schumann, J. ; Griessmann, H. ; Heinrich, A.
Author_Institution :
Inst. of Solid State & Mater. Res. Dresden, Germany
Abstract :
For medium and high temperatures thin films of the silicide compound β-FeSi2 may be used as thermopile material due to its high thermopower and thermal stability. From measurements of co-evaporated films conclusions have been drawn about an optimal film composition characterized by the Fe/Si ratio and the doping level. These results were the basis for the sputter deposition of p-type and n-type β-FeSi2+x films from a composite target. Co and Ni as well as Mn and Al were used for n- and p-doping, respectively. In-situ measurements of resistivity and thermopower in the temperature range 100 K⩽T⩽970 K have been carried out. In combination with XRD experiments correlations were derived between the thermoelectric properties and the phase formation process. The β-FeSi2 films were tested in thermopile structures with leg widths between 100 μm and 800 μm prepared by means of photolithographic patterning. Two types of thermocouples have been considered: p-type||n-type β-FeSi2.0 and n-type β-FeSi2.0||p-type Ni-Cr
Keywords :
aluminium; cobalt; electric sensing devices; electrical resistivity; iron compounds; manganese; nickel; photolithography; semiconductor materials; semiconductor thin films; sputter deposition; thermal stability; thermocouples; thermoelectric power; thermopiles; β-FeSi2; 100 to 970 K; Fe/Si ratio; FeSi2:Al; FeSi2:Co; FeSi2:Mn; FeSi2:Ni; co-evaporated films; doping level; film composition; phase formation; photolithographic patterning; resistivity; sputter deposition; thermal stability; thermocouples; thermopile material; thermopower; thin film thermoelement sensor material; Conductivity; Doping; Iron; Semiconductor films; Silicides; Sputtering; Temperature distribution; Thermal stability; Transistors; X-ray scattering;
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-4907-5
DOI :
10.1109/ICT.1998.740357