DocumentCode
2481006
Title
Thermoelectric properties of bismuth films
Author
Grabov, V.M. ; Komarov, V.A. ; Uryupin, O.N.
Author_Institution
Herzen Russian State Pedagogical Univ., St. Petersburg, Russia
fYear
1998
fDate
24-28 May 1998
Firstpage
241
Lastpage
243
Abstract
Thin bismuth polycrystalline and single crystal film transport coefficients are measured in the temperature range 80-300 K. The distinction between polycrystalline and single crystal films and bulk bismuth single crystal transport coefficients is established. The physical mechanism of the film transport peculiarity is discussed
Keywords
Hall effect; bismuth; magnetoresistance; semimetallic thin films; thermoelectric power; 80 to 300 K; Bi; Hall coefficient; magnetoresistance; polycrystalline films; single crystal films; thermoelectric properties; thermopower; thin films; transport coefficients; Bismuth; Crystallization; Electric resistance; Magnetic field measurement; Magnetic films; Magnetoresistance; Substrates; Temperature dependence; Temperature distribution; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location
Nagoya
ISSN
1094-2734
Print_ISBN
0-7803-4907-5
Type
conf
DOI
10.1109/ICT.1998.740361
Filename
740361
Link To Document