• DocumentCode
    2481040
  • Title

    Electroconductivity of profiled crystals based on Bi2Te 3 grown by direct crystallization in molding die with thin cavity

  • Author

    Belov, I.M. ; Volkov, M.P. ; Manyakin, S.M.

  • Author_Institution
    Crystal Co. Ltd., Moscow, Russia
  • fYear
    1998
  • fDate
    24-28 May 1998
  • Firstpage
    247
  • Lastpage
    248
  • Abstract
    Profiled crystals based on Bi2Te3 in the form of flat plates were grown by direct crystallization in molding die with thin cavity. Some results of electroconductivity measurements on n- and p-type samples are presented. The melt compositions are found which ensure the most uniform electroconductivity profiles along the length of ingots
  • Keywords
    bismuth compounds; crystal growth from melt; crystallisation; electrical conductivity; moulding; semiconductor growth; semiconductor materials; Bi2Te3; direct crystallization; electroconductivity; flat plates; ingots; melt compositions; molding die; n-type samples; p-type samples; profiled crystals; thin cavity; Bismuth; Charge carrier processes; Conducting materials; Conductivity; Crystalline materials; Crystallization; Equations; Probes; Tellurium; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
  • Conference_Location
    Nagoya
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-4907-5
  • Type

    conf

  • DOI
    10.1109/ICT.1998.740363
  • Filename
    740363
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2481040