Title :
Thermoelectric properties of Si0.8Ge0.2/Si multilayers
Author :
Kato, H. ; Yamamoto, A. ; Takimoto, M. ; Ohta, T. ; Sakamoto, K. ; Miki, K. ; Whitlow, L. ; Kamisako, K. ; Matsui, T.
Author_Institution :
Quantum Eng. Dept., Nagoya Univ., Japan
Abstract :
We produced Si0.8Ge0.2/Si multilayers using MBE and evaluated the electrical properties. Si0.8Ge0.2 quantum wells with various well widths separated by 200 Å Si barrier layers and also the samples with the same well/barrier width ratio were grown on high resistive Si(100) substrate with a 200 Å buffer layer. Both well and barrier layer were uniformly boron-doped. The resistivity and Seebeck coefficient were measured at room temperature and showed a size effect in power factor, α 2 /ρ, depending on the quantum well width
Keywords :
Ge-Si alloys; Seebeck effect; boron; electrical resistivity; elemental semiconductors; semiconductor materials; semiconductor quantum wells; semiconductor superlattices; silicon; size effect; 20 C; 200 A; MBE; Seebeck coefficient; Si0.8Ge0.2/Si multilayers; Si0.8Ge0.2:B-Si; barrier layer; barrier layers; boron; buffer layer; electrical properties; high resistive Si(100) substrate; power factor; quantum well width; quantum wells; resistivity; room temperature; size effect; thermoelectric properties; well widths; Buffer layers; Epitaxial growth; Molecular beam epitaxial growth; Nonhomogeneous media; Reactive power; Substrates; Superlattices; Temperature measurement; Thermal conductivity; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-4907-5
DOI :
10.1109/ICT.1998.740365
