3-D Resistance Model for Phase-Change Memory Cell

Author

Yihan Chen ; Kit Chu Kwong ; Xinnan Lin ; Zhitang Song ; Mansun Chan

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China

Volume

61

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

4098

Lastpage

4104

Abstract

In this paper, a 3-D resistance model is proposed for phase-change (PC) memory cell based on cell geometry and RESET current. Explicit expression is developed for PC radius in terms of RESET current, cell geometry, and material property. Conformal mappings are used for SET and RESET resistance calculation in 2-D models, which solve the problem of current crowding in structures with complex boundary condition. In the 3-D model development, additional spreading resistance is considered, together with the bulk resistance stemmed from 2-D model to form the eventual complete expression. Models show good consistency with finite element simulation and experimental data.

Keywords

conformal mapping; finite element analysis; phase change memories; 3D resistance model; RESET current; bulk resistance; cell geometry; conformal mappings; finite element simulation; material property; phase change memory cell; spreading resistance; Conformal mapping; Numerical models; Numerical simulation; Phase change materials; Resistance; Solid modeling; Three-dimensional displays; 3-D; conformal mapping; phase-change (PC) radius; phase-change memory (PCM); resistance model; resistance model.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2365012

Filename

6945360