Title :
A new theoretical design optimization of multiple quantum-well electroabsorption modulator
Author :
Sheikhi, M.H. ; Emamghoreishi, S.A. ; Javadpoor, S. ; Moravvej-Farshi, M.K.
Author_Institution :
Dept. of Elect. Eng., Shiraz Univ., Iran
Abstract :
A numerical model for computing electroabsorption in InAlAs/InGaAs multiple quantum well based on a matrix method is presented. The model is made simple to make it suitable as fast-design-tool for multiple quantum well electroabsorption modulators. A complete and self-consistent model of the quantum confined Stark effect (QCSE) is also presented. Scalar Schrodinger equation is solved in the presence of static electric field. The position of heavy hole (hh) exciton peak and its shift (stark shift) is calculated numerically, considering the effect of the number, width and height of quantum wells. Coupling effect between the quantum wells in the calculations was considered for the first time.
Keywords :
III-V semiconductors; Schrodinger equation; aluminium compounds; electro-optical modulation; electroabsorption; excitons; gallium arsenide; indium compounds; integrated optoelectronics; optical design techniques; quantum confined Stark effect; quantum well devices; semiconductor device models; semiconductor quantum wells; InAlAs-InGaAs; InAlAs/InGaAs multiple quantum well; Schrodinger equation; Stark shift; design optimization; heavy hole exciton peak; matrix method; multiple quantum-well electroabsorption modulator; quantum confined Stark effect; Design optimization; Excitons; Indium compounds; Indium gallium arsenide; Numerical models; Potential well; Quantum computing; Quantum well devices; Schrodinger equation; Stark effect;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International Conference on
Print_ISBN :
0-7803-7992-6
DOI :
10.1109/NUSOD.2003.1259031