Title :
Transport coefficients of Ge in magnetic fields
Author :
Ikeda, K. ; Nakamura, H. ; Yanenaga, I. ; Yamaguchi, S.
Author_Institution :
Graduate Univ. for Adv. Studies, Gifu, Japan
Abstract :
We measured the transport coefficients of InSb, Si and Ge in the magnetic field range of 0 to 4 Tesla near a room temperature. Transport coefficients obtained by measurements were electrical conductivity σ, Hall coefficient Rh, thermoelectric power α and Nernst coefficient N. These experimental results have been verifying by the theoretical calculations based on the band model. We report the experimental results compared with theoretical values in the case of Ge. Theoretical values had qualitative agreements with experimental results
Keywords :
Hall effect; III-V semiconductors; electrical conductivity; elemental semiconductors; germanium; indium compounds; silicon; thermoelectric power; thermomagnetic effects; 4 T; Ge; Hall coefficient; InSb; Nernst coefficient; Si; band model; electrical conductivity; thermoelectric power; transport coefficients; Electric variables measurement; Magnetic field measurement; Magnetic fields; Magnetic materials; Nuclear power generation; Plasma temperature; Power measurement; Shape measurement; Temperature distribution; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-4907-5
DOI :
10.1109/ICT.1998.740372
