Title :
Influence of fast neutrons on the recombination and electrical properties of neutron transmutation doped gallium arsenide
Author :
Bykovsky, V.A. ; Karas, V.I. ; Shoh, V.F. ; Strzelecka, S. ; Hruban, A. ; Gladysz, M.
Author_Institution :
Res. Inst. of Radiomater., Minsk, Byelorussia
fDate :
29 Apr-3 May 1996
Abstract :
The electrical properties, photoluminescence and DLTS spectra of LEC gallium arsenide crystals after neutron transmutation doping (NTD) has been investigated as functions of starting material properties, irradiation dose and thermal to fast neutron fluences-ratio. The residual carbon acceptors interact with radiation induced defects (RD) in neutron irradiated GaAs crystals and formed nonradiative recombination centers, which are stable up to 700°C
Keywords :
III-V semiconductors; carbon; deep level transient spectroscopy; defect states; electron-hole recombination; gallium arsenide; impurity states; impurity-defect interactions; neutron effects; nonradiative transitions; photoluminescence; semiconductor doping; thermal stability; 700 C; DLTS spectra; GaAs:C; LEC gallium arsenide crystals; NTD; electrical properties; fast neutrons; irradiation dose; neutron irradiated GaAs crystals; neutron transmutation doped gallium arsenide; neutron transmutation doping; nonradiative recombination centers; photoluminescence; radiation induced defects; recombination; residual carbon acceptors; starting material properties; thermal/fast neutron fluence-ratio; Annealing; Conductivity; Crystalline materials; Crystals; Doping; Gallium arsenide; Neutrons; Photoluminescence; Temperature dependence; Temperature distribution;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571106
