Title :
Recent advances in chemical beam epitaxy for opto-electronic device applications
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Chemical beam epitaxy (CBE) continues to make very important advances in large-area material uniformity, process control, new precursors and device applications. The performance of CBE-prepared devices, electronic and opto-electronic, is among the best state-of-the-art and in some cases the best in their areas, such as long wavelength multi-quantum well InGaAsP/InP DFB lasers, 0.98 μm GaAs/GaInP lasers, carbon-doped base GaAs/GaInP HBTs and InGaAs/InP HBTs and circuits
Keywords :
III-V semiconductors; bipolar integrated circuits; chemical beam epitaxial growth; distributed feedback lasers; heterojunction bipolar transistors; integrated circuit technology; integrated optoelectronics; optical communication equipment; optical fabrication; optoelectronic devices; quantum well lasers; 0.98 mum; CBE-prepared devices; GaAs; GaAs/GaInP HBTs; GaAs/GaInP lasers; GaInP; InGaAs; InGaAsP; InP; bipolar integrated circuits; chemical beam epitaxy; device applications; heterojunction bipolar transistors; large-area material uniformity; long wavelength multi-quantum well InGaAsP/InP DFB lasers; opto-electronic device; process control; Chemical processes; Circuits; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical materials; Optoelectronic devices; Process control;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379240
