Title :
MOVPE grown lasers having InGaAs/InP superlattice confinement and barrier layers
Author :
Ginty, A. ; Lambkin, J.D. ; Considine, L. ; Kelly, W.M.
Author_Institution :
Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
Abstract :
Novel long wavelength separate confinement heterostructure (SCH) and graded-index separate confinement heterostructure (GRIN-SCH) quantum well (QW) laser diodes have been made. These lasers use In0.53Ga0.47As/InP short period superlattices (SPSLs) instead of the conventional quaternary (InxGa1-x AsyP1-y) layers in the laser active region. The SPSLs consist of alternate thin layers of InP and In0.53Ga0.47As, with the ratio of their widths determining the effective bandgap. Therefore, once lattice matched InGaAs is achieved, a large continuous range of pseudo-quaternary alloys can be easily obtained by altering the SPSL well:barrier (InGaAs:InP) layer thicknesses. This allows long wavelength laser diodes to be grown without using quaternary alloys and consequently increases flexibility from both materials grows and laser design perspectives
Keywords :
III-V semiconductors; gallium arsenide; gradient index optics; indium compounds; optical fabrication; quantum well lasers; semiconductor growth; semiconductor superlattices; vapour phase epitaxial growth; GRIN-SCH QW laser diodes; In0.53Ga0.47As; In0.53Ga0.47As/InP short period superlattices; InGaAs; InGaAs/InP superlattice confinement layers; InP; MOVPE grown lasers; alternate thin layers; effective bandgap; graded-index separate confinement heterostructure; laser active region; laser design perspectives; lattice matched; layer thicknesses; long wavelength laser diodes; long wavelength separate confinement heterostructure; pseudo-quaternary alloys; quantum well laser diodes; quaternary alloys; superlattice barrier layers; Diode lasers; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Lattices; Photonic band gap; Potential well; Quantum well lasers; Superlattices;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379241
