Atmospheric pressure MOVPE growth with monolayer control of GaAs/AlGaAs doped and undoped superlattices for application to infrared detectors

Author

Mao, E. ; Lu, Z.H. ; Kim, B.W. ; McCormick, T. ; Oh, E.G. ; Dickey, S.A. ; Majerfeld, A.

Author_Institution

Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA

fYear

1993

fDate

15-18 Nov 1993

Firstpage

427

Lastpage

428

Abstract

In this presentation, it will be demonstrated that 50-period SLs with interface roughness, heterojunction abruptness, and layer thickness reproducibility of one atomic layer can be achieved by the atmospheric pressure MOVPE technique. We will also show that well controlled high doping levels, dopant position, and accurate measurement of the carrier density in the wells can be obtained, which are essential for making infrared photodetectors (IR PDs)

Keywords

III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; infrared detectors; photodetectors; semiconductor doping; semiconductor growth; semiconductor superlattices; vapour phase epitaxial growth; GaAs-AlGaAs; atmospheric pressure MOVPE growth; carrier density; doped superlattices; heterojunction abruptness; infrared photodetectors; interface roughness; layer thickness reproducibility; monolayer control; undoped superlattices; Atmospheric measurements; Atomic layer deposition; Atomic measurements; Doping; Epitaxial growth; Epitaxial layers; Heterojunctions; Laser sintering; Pressure control; Reproducibility of results;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379242

Filename

379242