• DocumentCode
    2481496
  • Title

    GaInAs(P)/InP ultra-fine structures: fabrication processes, quantum-wire lasers, and photonic devices

  • Author

    Arai, Shigehisa

  • Author_Institution
    Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
  • fYear
    1993
  • fDate
    15-18 Nov 1993
  • Firstpage
    437
  • Lastpage
    438
  • Abstract
    Summary form only given. Recent progress in fabrication processes toward GaInAs(P)/InP low-dimensional quantum-well structures by EBX lithography followed by wet chemical etching and a low-pressure OMVPE regrowth is presented. A CW threshold current density of 816 A/cm2 was obtained with a Ga0.66In0.34As/InP tensile-strained single-quantum-well laser 30-40 nm wide and with a 70 nm periodic active region
  • Keywords
    III-V semiconductors; electron beam lithography; etching; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; CW threshold current density; EBX lithography; Ga0.66In0.34As-InP; GaInAs(P)/InP ultra-fine structures; fabrication; low-dimensional structures; low-pressure OMVPE regrowth; photonic devices; quantum-wire lasers; tensile-strained single-quantum-well laser; wet chemical etching; Current density; Indium phosphide; Optical device fabrication; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-1263-5
  • Type

    conf

  • DOI
    10.1109/LEOS.1993.379247
  • Filename
    379247
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2481496