Title :
GaInAs(P)/InP ultra-fine structures: fabrication processes, quantum-wire lasers, and photonic devices
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
Summary form only given. Recent progress in fabrication processes toward GaInAs(P)/InP low-dimensional quantum-well structures by EBX lithography followed by wet chemical etching and a low-pressure OMVPE regrowth is presented. A CW threshold current density of 816 A/cm2 was obtained with a Ga0.66In0.34As/InP tensile-strained single-quantum-well laser 30-40 nm wide and with a 70 nm periodic active region
Keywords :
III-V semiconductors; electron beam lithography; etching; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; CW threshold current density; EBX lithography; Ga0.66In0.34As-InP; GaInAs(P)/InP ultra-fine structures; fabrication; low-dimensional structures; low-pressure OMVPE regrowth; photonic devices; quantum-wire lasers; tensile-strained single-quantum-well laser; wet chemical etching; Current density; Indium phosphide; Optical device fabrication; Wire;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379247
