Title :
Thermoelectric properties of α-Zn3P2
Author :
Nagamoto, Y. ; Hino, K. ; Yoshitake, H. ; Koyanagi, T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Yamaguchi Univ., Ube, Japan
Abstract :
The potential of the semiconducting compound α-Zn3P2 for thermoelectric application was investigated. α-Zn3P2 has a tetragonal crystal structure with a relatively complex unit cell, which results in a low lattice thermal conductivity. Several samples of α-Zn3 P2 were prepared using the solid-state reacted powders by the spark plasma sintering method. The electrical conductivity and the Seebeck coefficient measurements were performed over the temperature range 300-1000 K. The electrical conductivity of undoped α-Zn3P2 was found to be considerably lower than that of state-of-the-art thermoelectric materials. The electrical conductivity was increased by the substitution of Cu for Zn. Large Seebeck coefficients up to about 900 μVK-1 were obtained on the p-type undoped sample. The thermal conductivity was measured by the laser flash method over the temperature range 300-800 K. The obtained samples had relatively low thermal conductivity values and the room-temperature lattice thermal conductivity was estimated to be 13 mW cm-1K-1. The optimization of the electronic properties will be required to achieve the high thermoelectric figure of merit
Keywords :
Seebeck effect; crystal structure; semiconductor materials; thermal conductivity; thermoelectric power; zinc compounds; α-Zn3P2; 300 to 1000 K; 300 to 800 K; Seebeck coefficient measurements; Zn3P2; electrical conductivity; high thermoelectric figure of merit; low lattice thermal conductivity; room-temperature lattice thermal conductivity; tetragonal crystal structure; thermal conductivity; thermoelectric properties; Conductivity measurement; Lattices; Plasma measurements; Plasma temperature; Powders; Semiconductivity; Solid state circuits; Temperature distribution; Thermal conductivity; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-4907-5
DOI :
10.1109/ICT.1998.740393