Title :
Transport properties of single-wall carbon nanotubes
Author :
Grigorian, L. ; Sumanasekera, G.U. ; Eklund, P.C.
Author_Institution :
Kentucky Univ., Lexington, KY, USA
Abstract :
We have measured electron transport properties of laser-vaporization (LV) and arc-discharge (AD) grown pristine and doped single-wall carbon nanotubes (SWNT). The thermopower (S) of mats of pristine bundles of SWNTs prepared by both methods was found to be anomalously large, S=+40 to +60 μV/K at 300 K, 10-15 times higher than found in the basal plane of “flat” graphite. Both LV and AD mats exhibited unusual S vs. T dependence from 300 down to 10 K, featuring a broad maximum around 100 K superimposed on a metallic (linear) background. Upon chemical doping with either iodine or alkali metals (K, Cs), the magnitude of S (300 K) decreased ~fold. The sign of S was positive for the iodine-doped and negative for the alkali-metal-doped SWNT samples. Four-probe resistance (R) of the AD pristine SWNT mats increased with cooling within the studied T range from 300 to 10 K, while the LV pristine material exhibited a shallow resistivity minimum at T<300 K. Chemical doping with both iodine or alkali metals (K, Cs) resulted in a sharp decrease of R (300 K) values by a factor of 40 (iodine, K) to 120 (Cs). The R vs. T curves in the iodine-doped SWNT samples became almost T-independent down to 10 K. The optimally Cs-doped SWNT samples exhibited a 120-fold drop in R (300 K) and metallic behavior over the entire range of measurement (80 K<T<300 K)
Keywords :
carbon nanotubes; thermoelectric power; 300 K; C; arc-discharge; chemical doping; electron transport properties; laser-vaporization; single-wall carbon nanotubes; transport properties; Carbon nanotubes; Chemicals; Conductivity; Cooling; Crystallization; Doping; Electrons; Inorganic materials; Semiconductivity; Temperature dependence;
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-4907-5
DOI :
10.1109/ICT.1998.740394