Title :
Transparent indium tin oxide (ITO) ohmic contacts to both p- and n-GaAs for surface emitting lasers
Author :
Jezierski, Andnej F. ; Matin, Mohammad A. ; Basher, S.A. ; Cheng, Tin S. ; Lacklison, David ; Foxon, Tom ; Benson, Trevor M. ; Heath, Mike ; Orton, John ; Rezazadeh, A.A.
Author_Institution :
Dept. of Phys., Nottingham Univ., UK
Abstract :
Optically transparent low resistivity Indium Tin Oxide (ITO) ohmic contacts to both n- and p-type GaAs have been successfully investigated. Contacts are featureless and may be used in surface emitting lasers and other optoelectronic devices
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; ohmic contacts; semiconductor lasers; surface emitting lasers; tin compounds; transparency; GaAs-ITO; GaAs-InSnO; indium tin oxide ohmic contacts; n-GaAs; optically transparent low resistivity contacts; optoelectronic devices; p-GaAs; surface emitting lasers; Annealing; Gallium arsenide; Indium tin oxide; Ohmic contacts; Optical films; Optical pumping; Optical refraction; Optical variables control; Pump lasers; Surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379252
