The localization of the defects in semiconductor devices using a new laser scanning

Author

Stanciu, G.A.

Author_Institution

Dept. of Phys., Polytech. Inst. of Bucharest, Hungary

fYear

1993

fDate

15-18 Nov 1993

Firstpage

452

Lastpage

453

Abstract

Laser scanning microscopy has a number of desirable features which makes preferable to electron microscopy for a wide range of applications. The photoresponse properties of semiconductor devices such as p-i-n photodiodes have been investigated for possible use in detecting and locating various defects and also for the detection of resistivity and lifetime inhomogeneities in semiconductor devices. In all scanning techniques the same basic procedure is used. Laser beam is focused to a small spot on the specimen in order to build up an image

Keywords

measurement by laser beam; optical microscopy; optical scanners; optical testing; p-i-n photodiodes; semiconductor device testing; semiconductor devices; image; laser beam focusing; laser scanning microscopy; lifetime inhomogeneities; p-i-n photodiodes; resistivity; semiconductor device defects localisation; semiconductor devices; Conductivity; Focusing; Laser beams; Laser theory; Photodiodes; Probes; Scanning electron microscopy; Semiconductor devices; Semiconductor lasers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379255

Filename

379255