DocumentCode :
2481709
Title :
P5I-4 Diamond Saw Resonators With SiO2/ZnO/IDT/ZnO/Diamond Structure
Author :
Fujii, Satoshi ; Kawano, Shuichi ; Umeda, Takatoshi
Author_Institution :
Seiko Epson Corp., Nagano
fYear :
2007
fDate :
28-31 Oct. 2007
Firstpage :
2367
Lastpage :
2370
Abstract :
Diamond surface acoustic wave (SAW) resonators based on a SiO2/ZnO/diamond structure have been successfully developed to operate at a high frequency (ranging in GHz) and with good temperature stability. According to Lesson´s model, in order to obtain low phase noise the resonators in the oscillator circuit should have high power durability. This paper describes the improved power durability attained by diamond SAW resonators with an improved structure. The improved structure was achieved by adding one thin layer of ZnO film between the SiO2 and IDT layers of the conventional structure. It was found that the resonator with the improved structure was capable of handling 20 more dB of input power than the conventional structure handles. Structural calculations performed using the finite element method (FEM) confirmed a dramatic improvement in durability without significant changes in characteristics compared to the conventional structure, which does not have a layer of ZnO over the IDT.
Keywords :
II-VI semiconductors; diamond; finite element analysis; interdigital transducers; semiconductor thin films; silicon compounds; surface acoustic wave resonators; surface acoustic wave transducers; thin film devices; zinc compounds; FEM; IDT layers; SiO2-ZnO-C; diamond SAW resonators; finite element method; interdigital transducers; oscillator circuit; phase noise; power durability; Circuits; Frequency; Optical films; Oscillators; Phase noise; Sputtering; Surface acoustic wave devices; Surface acoustic waves; Temperature; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 2007. IEEE
Conference_Location :
New York, NY
ISSN :
1051-0117
Print_ISBN :
978-1-4244-1384-3
Electronic_ISBN :
1051-0117
Type :
conf
DOI :
10.1109/ULTSYM.2007.595
Filename :
4410168
Link To Document :
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