Thermoelectric properties of boron doped iron disilicide

Author

Isoda, Y. ; Shinohara, Y. ; Imai, Y. ; Nishida, I.A. ; Ohashi, O.

Author_Institution

Nat. Res. Inst. for Metals, Ibaraki, Japan

fYear

1998

fDate

24-28 May 1998

Firstpage

390

Lastpage

393

Abstract

B doped β-FeSi₂ has high thermal shock resistance. The effect of B doping on thermoelectric properties of β-FeSi₂ has been investigated. B doped FeSi₂ was a solid solution in the composition range 0<x⩽0.03. It was found that B atoms acted as donors in the whole composition range of x. The Seebeck coefficient of FeSi₂ was almost six times higher and also electrical resistivity was less than a quarter by B doping, because of hopping conduction. Lattice thermal conductivity was reduced by 20% by B doping of x=0.03. Mn doped p-type FeSi₂ has even lower effective maximum power P_eff by B doping, while P_eff of Co doped n-type samples was not affected by the doping. High thermal shock resistance was successfully given to Co doped n-type FeSi ₂ by B doping

Keywords

Seebeck effect; boron; electrical resistivity; hopping conduction; impurity states; iron compounds; semiconductor materials; solid solutions; thermal conductivity; thermal shock; thermoelectric power; β-FeSi₂:B; B doping effects; FeSi₂:B; FeSi₂:Co,B; FeSi₂:Mn,B; Seebeck coefficient; composition dependence; donors; effective maximum power; electrical resistivity; hopping conduction; lattice thermal conductivity; n-FeSi₂:Co,B; p-FeSi₂:Mn,B; solid solution; thermal shock resistance; thermoelectric properties; Boron; Doping; Electric resistance; Electric shock; Iron; Lattices; Solids; Thermal conductivity; Thermal resistance; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on

Conference_Location

Nagoya

ISSN

1094-2734

Print_ISBN

0-7803-4907-5

Type

conf

DOI

10.1109/ICT.1998.740401

Filename

740401