Title :
Thermoelectric properties of Ru2Si3 prepared by FZ and arc melting methods
Author :
Arita, Y. ; Miyagawa, T. ; Matsui, T.
Author_Institution :
Dept. of Quantum Eng., Nagoya Univ., Japan
Abstract :
Thermoelectric properties of undoped and Rh-doped Ru2Si 3 Prepared by arc melting method and undoped Ru2Si 3 by floating zone melting (FZ) method were measured. Electrical resistivity of the undoped arc-melted Ru2Si3 was very high because of the cracks along the grain boundary. By doping Rh the number of cracks and the value of resistivity in n-type Ru 2Si3 were decreased, but the absolute value of Seebeck coefficient did not so change. In the case of undoped single crystalline Ru2Si3 prepared by FZ method, low electrical resistivity was obtained indicating Ru2Si3 as the promising good thermoelectric material
Keywords :
Seebeck effect; electrical resistivity; grain boundaries; rhodium; ruthenium alloys; silicon alloys; thermoelectric power; zone melting; zone refining; Ru2Si3:Rh; Seebeck coefficient; arc melting methods; cracks; floating zone melting; grain boundary; resistivity; thermoelectric properties; Conducting materials; Electric resistance; Electric variables measurement; Electrons; Grain boundaries; Infrared heating; Powders; Silicon germanium; Thermal conductivity; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-4907-5
DOI :
10.1109/ICT.1998.740402
