Computer simulation of the growth of silicon ridges and wires

Author

Kersulis, S. ; Mitin, V. ; Malek, R. ; Rouhani, M. Djafari

Author_Institution

Dept. of Electr. & Comput. Eng., Wayne State Univ., Detroit, MI, USA

fYear

1996

fDate

April 29 1996-May 3 1996

Firstpage

311

Lastpage

314

Abstract

We have investigated the growth of heterostructures on the patterned substrates leading to the formation of semiconductor quantum wires (QWRs) using Monte Carlo simulation technique. Our simulation model includes real tetrahedral lattice structure of semiconductor materials, atom-atom interactions out to second nearest neighbors, and surface reconstruction effects. The growth of QWR with the top (001) surface and (111) sidewalls has been shown. The formation of (111) sidewalls with higher quality than that of top (001) surface has been obtained due to higher mobility of atoms on (111) surface

Keywords

Monte Carlo methods; digital simulation; elemental semiconductors; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wires; silicon; surface diffusion; surface reconstruction; (111) sidewalls; MBE; Monte Carlo simulation technique; QWR; Si; atom-atom interactions; computer simulation; growth; heterostructures; patterned substrates; second nearest neighbors; semiconductor quantum wires; silicon ridges; silicon wires; surface atom mobility; surface reconstruction effects; tetrahedral lattice structure; Computational modeling; Computer simulation; Lattices; Lead compounds; Nearest neighbor searches; Semiconductor materials; Silicon; Substrates; Surface reconstruction; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse, France

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.571108

Filename

571108