Title :
Computer simulation of the growth of silicon ridges and wires
Author :
Kersulis, S. ; Mitin, V. ; Malek, R. ; Rouhani, M. Djafari
Author_Institution :
Dept. of Electr. & Comput. Eng., Wayne State Univ., Detroit, MI, USA
fDate :
April 29 1996-May 3 1996
Abstract :
We have investigated the growth of heterostructures on the patterned substrates leading to the formation of semiconductor quantum wires (QWRs) using Monte Carlo simulation technique. Our simulation model includes real tetrahedral lattice structure of semiconductor materials, atom-atom interactions out to second nearest neighbors, and surface reconstruction effects. The growth of QWR with the top (001) surface and (111) sidewalls has been shown. The formation of (111) sidewalls with higher quality than that of top (001) surface has been obtained due to higher mobility of atoms on (111) surface
Keywords :
Monte Carlo methods; digital simulation; elemental semiconductors; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wires; silicon; surface diffusion; surface reconstruction; (111) sidewalls; MBE; Monte Carlo simulation technique; QWR; Si; atom-atom interactions; computer simulation; growth; heterostructures; patterned substrates; second nearest neighbors; semiconductor quantum wires; silicon ridges; silicon wires; surface atom mobility; surface reconstruction effects; tetrahedral lattice structure; Computational modeling; Computer simulation; Lattices; Lead compounds; Nearest neighbor searches; Semiconductor materials; Silicon; Substrates; Surface reconstruction; Wires;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse, France
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571108
