DocumentCode :
2481888
Title :
Development and evaluation of 3-stage segmented thermoelectric elements
Author :
Kang, Y.S. ; Niino, M. ; Nishida, I.A. ; Yoshino, J.
Author_Institution :
Kakuda Res. Center, Nat. Aerosp. Lab., Miyagi, Japan
fYear :
1998
fDate :
24-28 May 1998
Firstpage :
429
Lastpage :
432
Abstract :
One of a way to achieve high power performance of a thermoelectric device is to broaden the operating temperature range of thermoelectric materials. In order to realize this, a project team has carried out cooperative research and they have developed 3-stage segmented thermoelectric elements. The element is composed of three kinds of optimized thermoelectric materials: SiGe; PbTe; and Bi2Te3. The segmented element can work over a wide range from room temperature to 1073 K. Every stage of the thermoelectric element was prepared both in monolithic and 2 layer-stepwise structures, and they simply called the 3-stage element, constructed by gradient thermoelectric materials, FGM (functionally graded materials). For confirming the effect of large temperature range of the 3-stage segmented element, they also prepared a standard monolithic SiGe element, which was machined the same size as the segmented one. Evaluations for every element included electric resistance, generative current and power output. A large-temperature-span apparatus conducted the performance evaluations, and a high accuracy electronic load was used in this experiment. The results indicate that highest efficiency up to 17% is possible for the 3-stage segmented element, which was constructed by monolithic SiGe, PbTe and Bi2Te3. Amount of total resistance in the 3-stage segmented element significantly affects the power output. Improvement of the joining process for a stepwise graded element will greatly contribute to high power performance
Keywords :
Ge-Si alloys; bismuth alloys; lead alloys; tellurium alloys; thermoelectric conversion; thermoelectric power; Bi2Te3; PbTe; SiGe; cooperative research; electric resistance; electronic load; functionally graded materials; generative current; gradient thermoelectric materials; joining process; operating temperature range; performance evaluations; power output; thermoelectric device; thermoelectric materials; three-stage segmented thermoelectric elements; Bismuth; Conducting materials; Electric resistance; Germanium silicon alloys; Power generation; Silicon germanium; Tellurium; Temperature distribution; Thermoelectric devices; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
ISSN :
1094-2734
Print_ISBN :
0-7803-4907-5
Type :
conf
DOI :
10.1109/ICT.1998.740410
Filename :
740410
Link To Document :
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