Title :
Sinter-attach of Peltier dice for cooling of deep-drilling electronics
Author :
Kähler, J. ; Stranz, A. ; Waag, A. ; Peiner, E. ; Jung, S. ; Kruspe, T.
Author_Institution :
Inst. of Semicond. Technol., Tech. Univ. Braunschweig, Braunschweig, Germany
Abstract :
We evaluate Ag particle sintering as a highly reliable die attach technology for the assembly of thermoelectric modules. Bismuth telluride (Bi2Te3)-based Peltier coolers are realized using Ag sintering and tested for high-temperature applications (e.g. Measurement-While-Drilling, MWD). Bonding takes place at a pressure of 6 N/mm2 and a temperature of 250°C for 2 min. Shear tests are performed for evaluating the adhesion according the American military standard for chip-substrate contacts (MIL-STD- 883H, method 2019.8). Sintered layers are analyzed for porosity, Young´s modulus, electrical conductivity, and thermal conductivity. It is shown that due to specific additives (i.e. micro-diamond particles) the coefficient of thermal expansion (CTE) of sintered Ag layers can be reduced to meet the requirements of Bi2Te3 as well as next-generation thermoelectric materials (e.g. skutterudites) for minimized thermally induced stress during drilling.
Keywords :
Peltier effect; additives; adhesion; bismuth compounds; bonding processes; electrical conductivity; microassembling; porosity; silver; sintering; thermal conductivity; thermal expansion; thermal stresses; thermoelectric cooling; Ag; Ag particle sintering; Bi2Te3; CTE; MIL-STD- 883H; MWD; Peltier cooler; Peltier dice; Young´s modulus; additives; adhesion; bonding; chip-substrate contact; coefficient of thermal expansion; cooling; deep-drilling electronics; die attach technology; electrical conductivity; high-temperature application; measurement-while-drilling; method 2019.8; microdiamond particle; porosity; shear test; sinter-attach; temperature 250 C; thermal conductivity; thermally induced stress; thermoelectric material; thermoelectric module; time 2 min; Conductivity; Diamond-like carbon; Heating; Silver; Temperature measurement; Thermal conductivity; adhesive strength; conductivity measurement; electrical resistance measurement; materials testing; semiconductor device testing;
Conference_Titel :
Instrumentation and Measurement Technology Conference (I2MTC), 2012 IEEE International
Conference_Location :
Graz
Print_ISBN :
978-1-4577-1773-4
DOI :
10.1109/I2MTC.2012.6229481