Title :
High-frequency polarization switching of InGaAsP/InP diode lasers with a special ridge structure
Author :
Klehr, A. ; Müller, R. ; Voß, M. ; Barwolff, A.
Author_Institution :
Max-Born-Inst. fur Nichtlineare Optik und Kurzzeitspektroskopie, Berlin, Germany
Abstract :
The paper presents new experimental and theoretical results of fast TE/TM switching in a solitary polarization-bistable ridge waveguide InGaAsP/InP laser at 1.3 μm wavelength. A scheme of the cross section of the laser is shown
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; light polarisation; optical bistability; optical communication equipment; optical switches; ridge waveguides; semiconductor lasers; semiconductor switches; waveguide lasers; 1.3 mum; InGaAsP-InP; InGaAsP/InP diode lasers; cross section; fast TE/TM switching; high-frequency polarization switching; ridge structure; solitary polarization-bistable ridge waveguide InGaAsP/InP laser; Diode lasers; Fiber lasers; Hysteresis; Indium phosphide; Laser modes; Laser theory; Optical fiber polarization; Optical polarization; Tellurium; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379288
