DocumentCode
2482215
Title
High-frequency polarization switching of InGaAsP/InP diode lasers with a special ridge structure
Author
Klehr, A. ; Müller, R. ; Voß, M. ; Barwolff, A.
Author_Institution
Max-Born-Inst. fur Nichtlineare Optik und Kurzzeitspektroskopie, Berlin, Germany
fYear
1993
fDate
15-18 Nov 1993
Firstpage
516
Lastpage
517
Abstract
The paper presents new experimental and theoretical results of fast TE/TM switching in a solitary polarization-bistable ridge waveguide InGaAsP/InP laser at 1.3 μm wavelength. A scheme of the cross section of the laser is shown
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; light polarisation; optical bistability; optical communication equipment; optical switches; ridge waveguides; semiconductor lasers; semiconductor switches; waveguide lasers; 1.3 mum; InGaAsP-InP; InGaAsP/InP diode lasers; cross section; fast TE/TM switching; high-frequency polarization switching; ridge structure; solitary polarization-bistable ridge waveguide InGaAsP/InP laser; Diode lasers; Fiber lasers; Hysteresis; Indium phosphide; Laser modes; Laser theory; Optical fiber polarization; Optical polarization; Tellurium; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379288
Filename
379288
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