Title :
Effect of quantum well number on nonlinear refraction in semiconductor laser amplifiers biased at transparency
Author :
Davies, D.A.O. ; Fisher, M.A. ; Elton, D.J. ; Seltzer, C.P. ; Adams, M.J. ; Kennedy, G.T. ; Roberts, P. ; Grant, R.S. ; Sibbett, W.
Author_Institution :
BT&D Technol. Ltd., Ipswich, UK
Abstract :
To be able to exploit these effects in a device, and hence to be able to evaluate its performance, we wish to understand the implications of the choice of device construction on the size of nonlinearity as well as other parameters such as background loss which will limit its performance. We therefore present in this paper the results of experiments on a series of devices with various numbers of quantum wells as well as bulk active regions
Keywords :
light refraction; nonlinear optics; optical communication equipment; optical losses; optical switches; quantum well lasers; semiconductor switches; background loss; bulk active regions; device construction; nonlinear refraction; nonlinearity; quantum well number; quantum wells; semiconductor laser amplifiers; transparency; Fiber nonlinear optics; Nonlinear optics; Optical pumping; Optical refraction; Optical variables control; Quantum well lasers; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379291
