DocumentCode :
2482371
Title :
High power, diffraction limited laser diodes
Author :
Welch, David F. ; Parke, Ross ; Brien, Steve O. ; Dzurko, Ken ; Mehuys, Dave ; Lang, Robert ; Osinski, Jules
Author_Institution :
Spectra Diode Labs., San Jose, CA, USA
fYear :
1993
fDate :
15-18 Nov 1993
Firstpage :
534
Lastpage :
535
Abstract :
High power semiconductor laser diodes have many applications including satellite communications, printing, frequency doubling, and spectroscopy. Recent advances in the development of monolithically integrated master oscillator power amplifier configurations have resulted in the demonstration of single mode operation to output power in excess of 3 W CW. As a result the application of diode lasers to a greater variety of systems has begun and new applications are being raised which take advantage of the small size, efficient operation, and potential low cost. In this paper the characteristics of the M-MOPA architecture will be discussed
Keywords :
integrated optics; laser modes; power amplifiers; semiconductor lasers; 3 W; CW output power; M-MOPA; diffraction limited laser diodes; high power semiconductor laser diodes; monolithically integrated master oscillator power amplifier; single mode operation; Diffraction; Diode lasers; Frequency; Operational amplifiers; Oscillators; Power amplifiers; Power generation; Printing; Satellite communication; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
Type :
conf
DOI :
10.1109/LEOS.1993.379298
Filename :
379298
Link To Document :
بازگشت