Title :
High temperature thermoelectric properties of Ba1-xSr xPbO3 (0⩽x⩽1.0)
Author :
Murayama, N. ; Yasukawa, M.
Author_Institution :
Nat. Ind. Res. Inst. of Nagoya, Japan
Abstract :
Recently, some metal oxides have been noted as new candidate materials for high-temperature thermoelectric applications. It is known that a perovskite-type oxide, Ba1-xSrxPbO3 , changes from a semimetal to a narrow-gap semiconductor with increasing Sr content. In this work, thermoelectric properties of Ba1-xSrxPbO3 (0⩽x⩽0) were investigated in a temperature range of 320-1073 K. The electrical conductivity (σ) decreased with increasing Sr content. The Seebeck coefficient (S) was negative (n-type), and took a minimum value around 650 K. This result suggests that carriers consist of free electrons and thermally activated holes. The thermal conductivity (λ) decreased with increasing Sr content. The value of λ increased with increasing temperature for the samples with x⩽0.4, whereas it decreased with increasing temperature for the samples with x⩾0.6. The values of σ, S, λ of the sample with x=0.6 were 2.8×104 S/m, -120 μV/K and 2.0 W/mK, respectively, at 673 K. The figure of merit was 2.0×10-4/K. The optimum temperature for a power factor (σS2) increased with increasing Sr content. The power factor of the sample with x=1.0 was 4×10-4 W/mK2 at 1000 K. The figure of merit was estimated to be about 3.0×10-4/K at 1000 K, using a measured value of λ at 673 K
Keywords :
Seebeck effect; barium compounds; electrical conductivity; metal-insulator transition; narrow band gap semiconductors; power factor; strontium compounds; thermal conductivity; 320 to 1073 K; BaSrPbO3; Seebeck coefficient; Sr content; electrical conductivity; figure of merit; free electrons; perovskite-type oxide; power factor; semimetal-narrow gap semiconductor transition; thermal conductivity; thermally activated holes; thermoelectric properties; Conducting materials; Extraterrestrial measurements; Fluid flow; Inorganic materials; Reactive power; Semiconductor materials; Strontium; Temperature; Thermal conductivity; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-4907-5
DOI :
10.1109/ICT.1998.740441