Vertical-cavity-surface-emitting-laser with low series resistance and low operating voltage

Author

Rochus, S. ; Dill, C. ; Böhm, G. ; Klein, W. ; Walther, M. ; Tränkle, G. ; Weimann, G.

Author_Institution

Walther Schottky Inst., Tech. Univ. Munchen, Germany

fYear

1993

fDate

15-18 Nov 1993

Firstpage

548

Lastpage

549

Abstract

In the past years vertical-cavity-surface-emitting-lasers (VCSELs) found great interest for many applications in optoelectronic systems. Disadvantages, however, are the frequently reported high series resistances, arising from current injection over the multiple heterointerfaces of the distributed bragg reflectors (DBRs). We circumvent this problem by contacting both cladding layers of the pin-double heterostructure directly. The undoped active region consists of three 80 Å InGaAs strained quantum wells separated by GaAs spacers

Keywords

III-V semiconductors; claddings; distributed Bragg reflector lasers; electric resistance; gallium arsenide; indium compounds; integrated optoelectronics; laser cavity resonators; p-i-n diodes; quantum well lasers; surface emitting lasers; 80 A; DBR lasers; GaAs; GaAs spacers; InGaAs; InGaAs strained quantum wells; cladding layers; current injection; distributed bragg reflectors; low operating voltage; low series resistance; multiple heterointerfaces; optoelectronic systems; pin-double heterostructure; undoped active region; vertical-cavity-surface-emitting-laser; Dry etching; Gallium arsenide; Heat sinks; Low voltage; Mirrors; Molecular beam epitaxial growth; Power generation; Schottky diodes; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379305

Filename

379305