Lateral diffusion of carriers and screening measurements in GaInAsP/GaInAs MQW photorefractive devices at 1.55 μm

Author

Matos, C. De ; L´Haridon, H. ; Corre, A. Le ; Lambert, B. ; Salaün, S. ; Lever, R. ; Pleumeekers, J. ; Keromnes, J.C. ; Moisan, G. ; Vaudry, C. ; Gosselin, S.

Author_Institution

France Telecom CNET/LAB, Lannion, France

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

325

Lastpage

328

Abstract

We demonstrate the performance of a semiconductor photorefractive p-i-n diode operating at 1.55 μm in the longitudinal quantum-confined Stark geometry. The device structure consists of a semi-insulating GaInAsP/GaInAs multiple quantum well, sandwiched between two trapping regions, and embedded in a p-n junction. On this structure, we investigated the carrier lateral diffusion, the applied electric field screening and the diffraction efficiency

Keywords

gallium arsenide; gallium compounds; indium compounds; p-i-n photodiodes; photorefractive materials; quantum confined Stark effect; semiconductor quantum wells; semiconductor superlattices; spatial light modulators; 1.55 mum; GaInAsP-GaInAs; GaInAsP/GaInAs MQW photorefractive devices; carrier lateral diffusion; device structure; diffraction efficiency; electric field screening; lateral carrier diffusion; longitudinal quantum-confined Stark geometry; p-n junction; screening measurements; semi-insulating GaInAsP/GaInAs multiple quantum well; semiconductor photorefractive p-i-n diode; spatial light modulators; trapping regions; Absorption; Diffraction; Gain measurement; Optical devices; Optical modulation; Optical refraction; Optical variables control; P-n junctions; Photorefractive effect; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.571111

Filename

571111