Thermoelectric properties of boron-rich boride composites prepared through eutectic and peritectic reactions

Author

Goto, Takashi ; Li, Jianhui ; Hirai, Toshio

Author_Institution

Inst. for Mater. Res., Tohoku Univ., Sendai, Japan

fYear

1998

fDate

24-28 May 1998

Firstpage

574

Lastpage

577

Abstract

Boron-rich boride composites were prepared by arc-melting in an argon atmosphere, and their microstructures and thermoelectric properties were studied. B₄C-TiB₂ system was quasi-binary, and the typical lamellar structures indicating a eutectic reaction were observed. The eutectic composition was 25 mol% TiB₂, and a 6 mol% TiB₂-B₄C composite showed the greatest ZT values of 0.55 at 1100 K. The boron-rich region of Si-B-C system contained a peritectic reaction. The specimens consisting of SiB ₁₄, B₄C and free-Si were prepared. The greatest ZT value of this system was 0.4 at 1100 K for a specimen in which SiB₁₄ is the main phase with several 10 mol% of B₄C and free-Si

Keywords

boron compounds; crystal microstructure; electrical conductivity; phase diagrams; silicon compounds; thermoelectricity; titanium compounds; 1100 K; SiB₁₄-B₄C; TiB₂-B₄C; arc-melting; boron-rich boride composites; eutectic reactions; lamellar structures; microstructure; peritectic reactions; thermoelectric properties; Argon; Impurities; Microstructure; Plasma measurements; Plasma temperature; Powders; Scanning electron microscopy; Thermal conductivity; Thermoelectricity; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on

Conference_Location

Nagoya

ISSN

1094-2734

Print_ISBN

0-7803-4907-5

Type

conf

DOI

10.1109/ICT.1998.740444

Filename

740444